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APT34N80B2C3 APT34N80LC3
800V
34A 0.145
Super Junction MOSFET
C OLMOS O
Power Semiconductors
T-MAXTM
TO-264
* Ultra low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * Popular T-MAXTM or TO-264 Package
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
All Ratings: TC = 25C unless otherwise specified.
APT34N80B2C3_LC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
800 34 102 20 30 417 3.33 -55 to 150 300 50 17 0.5
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 34A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/C C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
670
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.125 1.0 0.145 50 500 200 2.10 3 3.9
(VGS = 10V, ID = 22A)
Ohms A nA Volts
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
050-7147 Rev F
6-2006
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT34N80B2C3 _LC3
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 34A @ 25C RESISTIVE SWITCHING VGS = 10V VDD = 400V ID = 34A @ 125C RG = 2.5 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V ID = 34A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 533V, VGS = 15V ID = 34A, RG = 5
MIN
TYP
MAX
UNIT
4510 2050 110 180 22 90 25 15 70 6 675 580 1145 670
MIN TYP MAX UNIT Amps Volts ns C pF
355
nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
80 9
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
34 102 1 855 30 6
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -34A)
1.2
Reverse Recovery Time (IS = -34A, dl S /dt = 100A/s, VR = 400V) Reverse Recovery Charge (IS = -34A, dl S /dt = 100A/s, VR = 400V) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
.30 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 115.92mH, RG = 25, Peak IL = 3.4A 5 IS = -34A di/dt = 100A/s VR = 480V TJ = 125C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f
0.30 0.9 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5 Note:
PDM
6-2006
0.3
t1 t2
050-7147 Rev F
Z
JC
0.1 0.05 10-5 10-4 SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
50
APT34N80B2C3 _LC3
VGS =15 & 10V 6.5V 6V 5.5V
40
TJ ( C)
0.117 Dissipated Power (Watts) 0.00828 0.174
TC ( C)
0.183
30 5V
ZEXT
20
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
10
4.5V 4V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 1.30 1.20 VGS=10V 1.10 1.00 0.90 0.80
NORMALIZED TO V = 10V @ 17A
GS
0
100 90
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
80 70 60 50 40 30 20 10 0
TJ = -55C
TJ = +25C TJ = +125C 012 34 567 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VGS=20V
0
10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
60
35 30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80
ID, DRAIN CURRENT (AMPERES)
50
75
100
125
150
-50
0
50
100
150
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3.0
I V
D
TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 17A = 10V
2.0 1.5 1.0 0.5 0 -50
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.5
GS
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7147 Rev F
6-2006
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
20,000 10,000
APT34N80B2C3 _LC3
Ciss
C, CAPACITANCE (pF)
Graph removed
1000 Coss
100
Crss
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
= 34A
200 100 TJ =+150C TJ =+25C 10
16 VDS= 160V 12 VDS= 400V 8 VDS= 640V
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 180 160 140
td(on) and td(off) (ns)
4 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 90 80 70
V
DD G
1
= 533V
td(off)
R
= 5
T = 125C
J
tf
L = 100H
120 100 80 60 40 20 0 0
V
DD G
= 533V
60
tr and tf (ns)
R
= 5
T = 125C
J
50 40 30 20 tr
L = 100H
td(on) 30 40 50 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10 0 0 10 20
10
20
30 40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4000
V I
DD
2000
= 533V R = 5
= 533V
3500
SWITCHING ENERGY (J)
D J
= 34A
T = 125C
SWITCHING ENERGY (J)
1500
J
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
L = 100H EON includes diode reverse recovery.
3000 2500 2000 1500 1000 500
1000
Eoff Eon
Eon
6-2006
500
050-7147 Rev F
30 40 50 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
10
20
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT34N80B2C3 _LC3
Gate Voltage
10 % T = 125 C J td(on)
Drain Current
90% t
d(off) Gate Voltage T = 125 C J
90%
Drain Voltage
90% 5% tr 10 %
t f 10% 0
Drain Current
5%
Drain Voltage
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7147 Rev F
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
6-2006
19.81 (.780) 20.32 (.800)
Gate Drain Source
Gate Drain Source

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